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Broadband Millimeter-Wave Anti-Reflection Coatings on Silicon Using Pyramidal Sub-Wavelength Structures

机译:基于硅的宽带毫米波抗反射涂层   金字塔子波长结构

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摘要

We used two novel approaches to produce sub-wavelength structure (SWS)anti-reflection coatings (ARC) on silicon for the millimeter and sub-millimeter(MSM) wave band: picosecond laser ablation and dicing with beveled saws. Weproduced pyramidal structures with both techniques. The diced sample, machinedon only one side, had pitch and height of 350 $\mu$m and 972 $\mu$m. The twolaser ablated samples had pitch of 180 $\mu$m and heights of 720 $\mu$m and 580$\mu$m; only one of these samples was ablated on both sides. We presentmeasurements of shape and optical performance as well as comparisons to theoptical performance predicted using finite element analysis and rigorouscoupled wave analysis. By extending the measured performance of the one-sideddiced sample to the two-sided case, we demonstrate 25 % band averagedreflectance of less than 5 % over a bandwidth of 97 % centered on 170 GHz.Using the two-sided laser ablation sample, we demonstrate reflectance less than5 % over 83 % bandwidth centered on 346 GHz.
机译:我们使用两种新颖的方法在毫米波和亚毫米波(MSM)波段上在硅上产生亚波长结构(SWS)减反射涂层(ARC):皮秒激光烧蚀和斜切锯切割。我们用两种技术制作了金字塔结构。切成丁的样品仅在一侧加工,间距和高度分别为350μm和972μm。两次激光烧蚀的样品的节距为180μm,高度为720μm和580μm。这些样品中只有一个在两侧被烧蚀。我们介绍了形状和光学性能的测量,以及与使用有限元分析和严格耦合波分析预测的光学性能的比较。通过将单面切块样品的测量性能扩展到两面情况,我们证明了以170 GHz为中心的带宽在97%的带宽上具有小于5%的25%的带平均反射率。证明在以346 GHz为中心的83%带宽上反射率不到5%。

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